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The Endura Avenir RF PVD (physical vapor deposition) system offers logic customers implementing high-k/metal gate at <32nm a uniquely production-worthy path for extending PVD technology to metal gate deposition that satisfies on-wafer requirements for uniformity and minimal plasma damage of ultra-thin films, consistent with device requirements for Vt shift, effective oxide thickness, leakage, and mobility.
The chamber’s RF-based plasma can be sustained at low power for exacting control when depositing <10Å films. At low power, the risk of plasma damage to the devices is minimzed, a critical requirement in gate first integration when depositing cap layers and metal gate films that have abrupt interfaces free of charge traps. The chamber is also capable of operating in high-pressure, capacitively coupled plasma mode for enhanced bottom coverage and minimal overhang, critical requirements for metal layers in gate last integration.
Besides readily extending their existing PVD capabilities on the production-proven Endura platform, the Avenir chamber offers fabs the added productivity advantages of common hardware for multiple front-end-of-line applications and easy transitioning from gate first to gate last integration. |
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